M57962K Datasheet, PDF (4/6 Pages) Powerex Power Semiconductors – Hybrid Integrated Circuit For Driving IGBT Modules

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
M57962K
Hybrid IC for IGBT Gate Driver
Application Circuit
+5V
B1
CONTROL
FAULT
14
13
+
VCC
+
VEE
10
PS2501
M57962K
9
8
6
5
+ _C1
4.7k
4
3
+
C2
2
1
+
RF
Ctrip
30V
CF
RG
18V
18V
D1
C
IGBT
MODULE
G
E
E
Component Selection:
Design
Description
VCC, VEE
RG
+15V/-10V Typical, See data sheet for usable limits
Adjust for application requirements. See IGBT module application notes
for recommendations and power rating
C1, C2
10µF-100µF 25V low impedance electrolytic
D1
Ctrip
B1
Ultra fast recovery trr<100ns, High voltage Vrrm>Vces(IGBT)
0-200pF adjusts desaturation trip time (ttrip)
CMOS Buffer 74HC04 or similar – Must actively pull high to maintain noise immunity
RF
390Ω - 510Ω (Usually unnecessary)
CF
100pF – 470pf (Usually unnecessary)
Notes:
(1) Power supply decoupling capacitors C1 and C2 should be connected as close as possible to the pins of the
gate driver and must be sized to have appropriate ESR and ripple current capability for the IGBT being driven.
(2) Ctrip should be connected as close as possible to the pins of the gate driver to avoid noise pick-up.
(3) All zener diodes 1W, all resistors 0.25W unless otherwise noted.
(4) When RG is less than 3 times the minimum value, Collector Voltage surges may affect Gate Drive.
+5V
B1
CONTROL
FAULT
14
13
+
VCC
10
PS2501
2.7k
8.2V
M57962K
9
8
6
5
+ _C1
4.7k
4
3
+
C2
2
1
+
RF
Ctrip
30V
CF
RG
18V
18V
D1
C
IGBT
MODULE
G
E
E

11/06