FS2KM-18A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
ID = 2A
16
VDS = 250V
12
400V
600V
8
4
0
0
4
8
12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS2KM-18A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
VGS = 0V
Pulse Test
8
6
4
TC = 125°C
75°C
2
25°C
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7
VGS = 10V
ID = 1/2ID
5
Pulse Test
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10¹
7
5 ^{D = 1.0}
3 0.5
2
10^{0 0.2}
7 _0.1
5
3
2
10^–1
7
5
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
10^–2_{10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102}
PULSE WIDTH tw (s)
Feb.1999