CM600DY-34H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM600DY-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
VCC = 850V, VGE = ±15V
3 RG = 3.3Ω, Tj = 125°C
2 ^{Inductive load}
10⁰
td(off)
7
5
td(on)
3
tr
2
tf
10^–1
7
5 _{5 7 102 2 3 5 7 103 2 3 5}
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c) = 0.032°C/ W
2 _{(Per 1/2 module)}
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 850V, Tj = 25°C
3 Inductive load
3
2 ^{VGE = ±15V, RG = 3.3Ω}
2
trr
10⁰
10³
7
7
5
5
Irr
3
3
2
2
10^–1
7
5 _{5 7 102}
23
5 7 10³
23
10²
7
55
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c) = 0.080°C/ W
2 _{(Per 1/2 module)}
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
VGE – GATE CHARGE
(TYPICAL)
20
VCC = 850V
IC = 600A
16
12
8
4
0
0 1000 2000 3000 4000 5000
GATE CHARGE QG (nC)
Feb. 2000