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| CM50TU-24F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TU-24F
Trench Gate Design Six IGBTMODâ¢
50 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj = 25oC
11
15
80
VGE = 20V
10 9.5
9
60
40
8.5
20
8
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
Tj = 25°C
101
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
VGE = 15V
2.5
Tj = 25°C
Tj = 125°C
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
102
VGE = 0V
Cies
101
100
10-1
0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
102
trr
Irr
101
101
100
100
VCC = 600V
VGE = ±15V
RG = 6.3 â¦
Tj = 25°C
Inductive Load 100
101
102
EMITTER CURRENT, IE, (AMPERES)
100
Coes
10-1
10-1
100
Cres
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 50A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
200
400
600
800
GATE CHARGE, QG, (nC)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 100A
2
IC = 50A
IC = 20A
1
0
0
103
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
tf
td(off)
102
td(on)
101
100
100
VCC = 600V
tr
VGE = ±15V
RG = 6.3 â¦
Tj = 125°C
Inductive Load
101
102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10110-3
10-2
10-1
100
101
Per Unit Base
Rth(j-c) = 0.39°C/W (IGBT)
100
Rth(j-c) = 0.7°C/W (FWDi)
Single Pulse
TC = 25°C
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
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