CM400HB-90H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Single IGBTMOD™ HVIGBT 400 Amperes/4500 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM400HB-90H
Single IGBTMOD™ HVIGBT
400 Amperes/4500 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
V_GE = 15V
5
T_j = 25°C
T_j = 125°C
4
3
2
1
0
0 200 400 600 800
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
1.2
Single Pulse
1.0
T_C = 25°C
Per Unit Base = R_th(j-c) = 0.045 K/W
1000
0.8
0.6
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
TIME, (s)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
0.30
0.25
0.20
0.15
0.10
0.05
0
0
V_CC = 2250V
V_GE = ±15V
R_G = 22.5Ω
L_S = 180nH
T_j = 125°C
Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions
200
400
600
EMITTER CURRENT, I_E, (AMPERES)
800
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
6
T_j = 25°C
5
T_j = 125°C
4
3
2
1
0
0 200 400 600 800 1000
EMITTER CURRENT, I_E, (AMPERES)
HALF-BRIDGE TURN-ON SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
5
V_CC = 2250V
V_GE = ±15V
4 ^RG ^{= 22.5Ω}
L_S = 180nH
T_j = 125°C
3
Inductive Load Integrated
Over Range of 10%
2
1
0
0
1000
200
400
600
COLLECTOR CURRENT, I_C, (AMPERES)
800
TURN-ON SWITCHING
SAFE OPERATING AREA (RBSOA)
(TYPICAL)
800
600
400
V_CC = 3000V
V_GE = ±15V
200 R_G = 22.5Ω
L_S = 100nH
T_j = 125°C
0
0 1000 2000
3000
4000
5000
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
1.2
Single Pulse
1.0
T_C = 25°C
Per Unit Base = R_th(j-c) = 0.023 K/W
0.8
0.6
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
TIME, (s)
HALF-BRIDGE TURN-OFF SWITCHING
ENERGY CHARACTERISTICS
(TYPICAL)
3.0
V_CC = 2250V
2.5
V_GE = ±15V
R_G = 22.5Ω
L_S = 180nH
2.0
T_j = 125°C
Inductive Load Integrated
Over Range of 10%
1.5
1.0
0.5
0
0
1500
200
400
600
COLLECTOR CURRENT, I_C, (AMPERES)
DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
800
1250
1000
750
500
250
0
0
1000 2000 3000 4000
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
4