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| CM200DY-12NF Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM200DY-12NF
Dual IGBTMOD⢠NF-Series Module
200 Amperes/600 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
VCC = 300V
VGE = ±15V
RG = 3.1â¦
Tj = 25°C
Inductive Load
102
102
101
101
102
EMITTER CURRENT, IE, (AMPERES)
Irr
trr
101
103
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
102
VCC = 300V
VGE = ±15V
IC = 200A
Tj = 125°C
Inductive Load
C Snubber at Bus
101
100
100
ESW(on)
ESW(off)
101
GATE RESISTANCE, RG, (â¦)
102
GATE CHARGE VS. VGE
20
IC = 200A
16
VCC = 200V
12
VCC = 300V
8
4
0
0 200 400 600 800 1000 1200
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
101
100
10-1
101
VCC = 300V
VGE = ±15V
RG = 3.1â¦
Tj = 125°C
Inductive Load
C Snubber at Bus
ESW(on)
ESW(off)
102
103
COLLECTOR CURRENT, IC, (AMPERES)
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.19°C/W
(IGBT)
Rth(j-c) =
0.35°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
4
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