CM200DX-24S Datasheet, PDF (4/9 Pages) Powerex Power Semiconductors – Dual IGBT NX-Series Module 200 Amperes/1200 Volts

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CM200DX-24S
Dual IGBT NX-Series Module
200 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified (continued)
NTC Thermistor Part
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R₂₅
∆R/R
B_(25/50)
P₂₅
Test Conditions
T_C = 25°C^*4
T_C = 100°C^*4, R₁₀₀ = 493Ω
Approximate by Equation^*6
T_C = 25°C^*4
Min.
Typ.
Max. Units
4.85 5.00 5.15
kΩ
-7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case^*4
Thermal Resistance, Junction to Case^*4
Contact Thermal Resistance,
Case to Heatsink^*4
R_th(j-c)Q
R_th(j-c)D
R_th(c-f)
Per Inverter IGBT
Per Inverter FWDi
Thermal Grease Applied,
Per 1 Module^*7
—
—
0.10
K/W
—
—
0.19
K/W
—
15
—
K/kW
Mechanical Characteristics
Mounting Torque
Mounting Torque
Creepage Distance
Clearance
Weight
Flatness of Baseplate
M_t
Main Terminals, M6 Screw
31
35
40
in-lb
M_s
Mounting to Heatsink, M5 Screw
22
27
31
in-lb
d_s
Terminal to Terminal
11.55
—
—
mm
Terminal to Baseplate
12.32
—
—
mm
d_a
Terminal to Terminal
10.00
—
—
mm
Terminal to Baseplate
10.85
—
—
mm
m
—
350
— Grams
e_c
On Centerline X, Y^*8
±0
—
±100
µm
Recommended Operating Conditons, T_a = 25°C
DC Supply Voltage
V_CC
Gate-Emitter Drive Voltage
V_GE(on)
Applied Across P-N Terminals
Applied Across
G1-Es1/G2-Es2 Terminals
External Gate Resistance
R_G
Per Switch
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
0
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6
B_(25/50) = In(RR₅₂₀₅)/(T₂¹₅
1
– _T50
)
29.1
38.1
R₂₅; Resistance at Absolute Temperature T₂₅ [K]; T₂₅ = 25 [°C] + 273.15 = 298.15 [K]
R₅₀; Resistance at Absolute Temperature T₅₀ [K]; T₅₀ = 50 [°C] + 273.15 = 323.15 [K]
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
—
600
850
Volts
13.5 15.0 16.5 Volts
0
—
22
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
Di2 Tr2
Th
48
24
Di1
Tr1
23
28.2
41.7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
LABEL SIDE
Ω
Y
X
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
– : CONCAVE
+ : CONVEX
HEATSINK SIDE
4
05/13 Rev. 5