 English |
|
|
|
|
|
|
|
| CM200DC-24NFM Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Dual IGBT NFM-Series Module 200 Amperes/1200 Volts | |||
| |||
| ◁ |
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DC-24NFM
Dual IGBT NFM-Series Module
200 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
103
Irr
trr
102
102
101
101
VCC = 600V
VGE = ±15V
RG = 1.6â¦
Tj = 125°C
Inductive Load 101
102
103
EMITTER CURRENT, IE, (AMPERES)
SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
102
101
100
100
VCC = 600V
VGE = ±15V
IC = 200A
Tj = 125°C
Inductive Load
Eon
Eoff
101
GATE RESISTANCE, RG, (â¦)
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10010-3
10-2
10-1
100
101
GATE CHARGE VS. VGE
20
IC = 200A
VCC = 400V
15
VCC = 600V
10
5
0
0 200 400 600 800 1000 1200 1400
GATE CHARGE, QG, (nC)
REVERSE RECOVERY SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
102
VCC = 600V
VGE = ±15V
RG = 1.6â¦
Tj = 125°C
Inductive Load
101
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS VS.
COLLECTOR CURRENT (TYPICAL)
102
VCC = 600V
VGE = ±15V
RG = 1.6â¦
Tj = 125°C
Inductive Load
Eon
101
Eoff
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE (TYPICAL)
102
VCC = 600V
VGE = ±15V
IC = 200A
Tj = 125°C
Inductive Load
101
100
100
101
102
GATE RESISTANCE, RG, (â¦)
10-1
10-2
10-3
Single Pulse
TC = 25°C
Under the Chip
Per Unit Base =
Rth(j-c) =
0.093°C/W
(IGBT)
Rth(j-c) =
0.14°C/W
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
02/07
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese