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| CM150TJ-12F Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Trench Gate Design Six IGBTMOD™ 150 Amperes/600 Volts | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150TJ-12F
Trench Gate Design Six IGBTMODâ¢
150 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj = 25oC
250
VGE = 20V
15
11
10
9.5
200
9
150
8.5
100
8
50
7.5
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
VGE = 15V
2.5
Tj = 25°C
Tj = 125°C
2.0
1.5
1.0
0.5
0
0
100
200
300
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
102
VGE = 0V
Cies
101
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 300A
2
IC = 150A
1
IC = 60A
0
0
103
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
tf
102
td(on)
101
100
Coes
Cres
100
0
1.0
2.0
3.0
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
102
Irr
trr
101
101
100
101
VCC = 300V
VGE = ±15V
RG = 4.2 â¦
Tj = 25°C
Inductive Load 100
102
103
EMITTER CURRENT, IE, (AMPERES)
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 150A
16
VCC = 300V
12
VCC = 200V
8
4
0
0
400 800 1200 1600
GATE CHARGE, QG, (nC)
101
100
100
tr
VCC = 300V
VGE = ±15V
RG = 4.2 â¦
Tj = 125°C
Inductive Load
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10110-3
10-2
10-1
100
101
Rth(j-c) = 0.31°C/W (IGBT)
Under Chip = 0.19°C/W
100 Rth(j-c) = 0.47°C/W (FWDi)
10-1
10-1
10-2
10-3
Per Unit Base
Single Pulse
TC = 25°C
10-5
TIME, (s)
10-4
10-2
10-3
10-3
4
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