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CM1200HA-34H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
5
VCC = 850V, VGE = ±15V
3 RG = 1.6â¦, Tj = 125°C
2 Inductive load
100
td(off)
7
5
td(on)
3
tr
2
tf
10â1
7
5
5
7 102
23
5 7 103
23
5
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
101
7 Single Pulse
5 TC = 25°C
3 Rth(j â c) = 0.016°C/ W
2
100
7
5
3
2
10â1
7
5
3
2
10â2
10â3 2 3 5 7 10â2 2 3 5 7 10â1 2 3 5 7 100
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 850V, Tj = 125°C
3 Inductive load
3
2 VGE = ±15V, RG = 1.6â¦
2
trr
100
103
7
Irr
7
5
5
3
3
2
2
10â1
7
5
5
7 102
23
5 7 103
23
EMITTER CURRENT IE (A)
102
7
5
5
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
101
7 Single Pulse
5 TC = 25°C
3 Rth(j â c) = 0.040°C/ W
2
100
7
5
3
2
10â1
7
5
3
2
10â2
10â3 2 3 5 7 10â2 2 3 5 7 10â1 2 3 5 7 100
TIME (s)
VGE â GATE CHARGE
(TYPICAL)
20
VCC = 850V
IC = 1200A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
Feb. 2000
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