CM10MD-12H Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM10MD-12H
CIB Module
Three Phase Converter + Three Phase Inverter + Brake
10 Amperes/600 Volts
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
IGBT Inverter Sector
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate-Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I_CES
V_GE(th)
I_GES
V_CE(sat)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Resistive
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Thermal Resistance (Junction-to-Fin)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V_EC
t_rr
Q_rr
R_th(j-f)
V_CE = V_CES, V_GE = 0V
V_CE = 10V, I_C = 1mA
V_GE = V_GES, V_CE = 0V
V_GE = 15V, I_C = 10A, T_j = 25°C
V_GE = 15V, I_C = 10A, T_j = 150°C
V_GE = 0V, V_CE = 10V
V_CC = 300V, I_C = 10A, V_GE = 15V
V_GE1 = V_GE2 = 15V,
V_CC = 300V, I_C = 10A,
R_g = 63Ω,
Resistive Load
I_E = 10A, V_GE = 0V
I_E = 10A, V_GE = 0V,
di_E/dt = -20A/µs
Per IGBT
Per FWDi
—
—
1
mA
4.5
6.0
7.5
Volts
—
—
0.5
µA
—
2.1
2.8
Volts
—
2.15
—
Volts
—
—
1.0
nF
—
—
0.9
nF
—
—
0.2
nF
—
30
—
nC
—
—
120
nS
—
—
300
nS
—
—
200
nS
—
—
300
nS
—
—
2.8
Volts
—
—
110
nS
—
0.03
—
µC
—
—
3.5
°C/W
—
—
4.0
°C/W
4