 English |
|
|
|
|
|
|
|
| CM100TU-12F Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
| |||
| ◁ |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100TU-12F
Trench Gate Design Six IGBTMODâ¢
100 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25oC
11
15
160
VGE = 20V
120
10
9.5
9
80
8.5
40
8
7.5
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2.5
VGE = 15V
Tj = 25°C
2.0
Tj = 125°C
1.5
1.0
0.5
0
0 40 80 120 160 200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
102
VGE = 0V
Cies
101
101
100
0
.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
102
trr
Irr
101
101
100
100
VCC = 300V
VGE = ±15V
RG = 6.3 â¦
Tj = 25°C
Inductive Load 100
101
102
EMITTER CURRENT, IE, (AMPERES)
100
Coes
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 100A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
300
600
900
GATE CHARGE, QG, (nC)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
3
IC = 200A
2
IC = 100A
1
IC = 40A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 300V
VGE = ±15V td(off)
RG = 6.3 â¦
Tj = 125°C
tf
102 Inductive Load
td(on)
101
tr
100
100
101
COLLECTOR CURRENT, IC, (AMPERES)
102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10110-3
10-2
10-1
100
101
Per Unit Base
Rth(j-c) = 0.35°C/W (IGBT)
100
Rth(j-c) = 0.7°C/W (FWDi)
Single Pulse
TC = 25°C
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
4
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese