BCR5PM Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
BCR5PM
Isolated Triac
5 Amperes/400-600 Volts
Electrical and Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Thermal Resistance, Junction-to-case R_th(j-c)
–
Steady State Thermal Resistance,
R_th(j-a)
–
Junction-to-ambient
–
–
4
°C/W
–
–
60
°C/W
Voltage – Blocking State
Repetitive Off-state Current
Current – Conducting State
Peak On-state Voltage
DC Holding Current
I_DRM
V_TM
I_H
Critical Rate-of-rise of Commutating
Off-state Voltage (Commutating dv/dt)
v for inductive load (L)
(Switching)
(dv/dt)_c
Gate Open Circuited,
V_D = V_DRM, T_j = 125°C
T_c = 25°C, 8.3ms Pulsewidth
Duty Cycle <2%, I_TM = 7A Peak
Main Terminal Source Voltage = 75Vdc,
Peak Initiating On-state Current = 1A,
T_j = 25°C
–
–
–
–
–
–
30
–
–
2
mA
1.8 Volts
–
MA
–
V/␮s
⌬ Part
Number
V_DRM
(Volts)
Commutating
dv/dt, (dv/dt)_c
(V/␮sec)
Load Type Minimum
Test Condition
Commutating Voltage &
Current Waveform
(Inductive Load)
BCR5PM-8L 400
BCR5PM-12L 600
L
5
T_j = 125°C,
SUPPLY
L
5
Rate of Decay
VOLTAGE
On-state
Commutating
Current
MAIN
CURRENT
(di/dt)_c = -2.5A/msec; _MAIN
Peak Off-state
VOLTAGE
Voltage
V_D = 400V
(dv/dt)_C
t
(di/dt)_C
t
V_D
t
V_D
T-24