BCR08AS Datasheet, PDF (4/5 Pages) Powerex Power Semiconductors – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
3
2
10²
7
5
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10²
7
5
DISTRIBUTION
3
T2⁺, G^–
2
TYPICAL EXAMPLE
10¹
7
5
3
2
10⁰
7
5
3
2
10^–1
T2⁺,
T2^– ,
T2^– ,
G⁺
G^–
G⁺

TYPICAL
EXAMPLE
–40 0
40 80
120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
I QUADRANT
100
80
60
III QUADRANT
40
20
0
10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3 5 7 10³
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
10¹
7
5
TYPICAL
EXAMPLE
Tj = 125°C
3
IT = 1A
τ = 500µs
2
VD = 200V
f = 3Hz
10⁰
7
III QUADRANT
5
3 ^MINIMUM
2
CHARAC-
TERISTICS
I QUADRANT
VALUE
10^–1
10^–1 2 3
5 7 10⁰
23
5 7 10¹
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
Mar. 2002