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BCR08AS-8 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE | |||
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REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
7 TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
â60 â40 â20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR â©TRIACâª
BCR08AS-8
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
,,,,,,,,,,,,,,,,,,,,,,,,,,,D,,,,,,,,,IST,,,,,,,,,RIB,,,,,,,,,TUYT,,,,,,,,,PIOIC,,,,,,,,,NAL,,,,,,,,,EX,,,,,,,,,AM,,,,,,,,,PLE
10â1
â60 â40 â20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10â1
,,,,,,,,,,TTT,,,,,,,,,,222+ââD,,,GGGI,,,,,,,,,,S+â+TR,,,,,,,,,,TEIYXB,,,,,,,,,,PAUIMTC,,,,,,,,,,IPAOLLNTTE,,,,,,,,,,2Y+,P,,,,,,,,,,GICâ ,,,,,,,,,,AL,,,,,,,,,,EX,,,,,,,,,,AMPLE
â40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
140
Tj = 125°C
120
100
I QUADRANT
80
60
III QUADRANT
40
20
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
â60 â40 â20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
COMMUTATION CHARACTERISTICS
102
7
5
VOLTAGE WAVEFORM
t
3 (dv/dt)C
VD
2 CURRENT WAVEFORM
101 IT
(di/dt)C
7
Ï
t
5
3
2
TYPICAL
EXAMPLE
Tj = 125°C
IT = 1A
Ï = 500µs
VD = 200V
f = 3Hz
III QUADRANT
100
7
5
MINIMUM
3
2
CHARAC-
TERISTICS
I QUADRANT
VALUE
10â1
10â1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
Feb.1999
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