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QID3310006 Datasheet, PDF (3/6 Pages) Powerex Power Semiconductors – Dual IGBT HVIGBT Module 100 Amperes/3300 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3310006
Dual IGBT HVIGBT Module
100 Amperes/3300 Volts
Preliminary
Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Diode Reverse Recovery Energy
Stray Inductance (C1-E2)
Lead Resistance Terminal-Chip
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
trr
Qrr
Erec
LSCE
RCE
VGE = 0V, VCE = 10V
VCC = 1800V, IC = 100A,
VGE = ±15V,
RG(on) = 30Ω, RG(off) = 100Ω,
LS = 100nH, Inductive Load
Tj = 150°C, IC = 100A, VGE = ±15V,
RG(on) = 30Ω, RG(off) = 100Ω,
VCC = 1800V, LS = 100nH, Inductive Load
VCC = 1800V, IE = 100A,
VGE = ±15V, RG(on) = 30Ω,
LS = 100nH, Inductive Load, Tj = 150°C
Min.
Typ.
Max. Units
—
11.5
—
nF
—
0.75
—
nF
—
0.35
—
nF
—
800
—
ns
—
160
—
ns
—
3200
—
ns
—
1300
—
ns
—
250
—
mJ/P
—
180
—
mJ/P
—
500
—
ns
—
90*
—
µC
—
133
—
mJ/P
—
75
—
nH
—
1.5
—
mΩ
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case***
Thermal Resistance, Junction to Case***
Contact Thermal Resistance, Case to Fin
Comparative Tracking Index
Rth(j-c) Q
Rth(j-c) D
Rth(c-f)
CTI
Per IGBT
Per FWDi
Per Module,
Thermal Grease Applied, λgrease = 1W/mK
Clearance Distance in Air (Terminal to Base)
Creepage Distance Along Surface
(Terminal to Base)
da(t-b)
ds(t-b)
Clearance Distance in Air
(Terminal to Terminal)
da(t-t)
Creepage Distance Along Surface
(Terminal to Terminal)
ds(t-t)
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.
Min.
Typ.
Max. Units
—
0.12
—
°C/W
—
0.19
—
°C/W
—
0.018
—
°C/W
600
—
35.0
—
64
—
—
—
mm
—
mm
19
—
—
mm
54
—
—
mm
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
11/14 Rev. 1
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