QID1210006_14 Datasheet, PDF (3/7 Pages) Powerex Power Semiconductors – Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
QID1210006
Split Dual Si/SiC Hybrid IGBT Module
100 Amperes/1200 Volts
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Diode Forward Voltage
Diode Reverse Current
Diode Capacitive Charge
VFM
IR
QC
IF = 80A, VGS = -5V
—
IF = 80A, VGS = -5V, Tj = 175°C
—
VR = 1200V
—
VR = 1200, Tj = 150°C
—
VR = 1200V, IF = 80A, di/dt = 800A/μs —
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Internal Inductance
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
RG
Lint
Per IGBT 1/2 Module,
—
TC Reference Point Under Chips
Per FWDi 1/2 Module, TC Reference
—
TC Reference Point Under Chips
Per 1/2 Module, Thermal Grease Applied —
3.1
IGBT Part
—
Typ.
Max. Units
1.6
2.0
Volts
2.5
3.2
Volts
140
800
μA
260
1600
μA
520
—
nC
Typ.
Max. Units
—
0.217 °C/W
—
0.368 °C/W
0.04
—
°C/W
—
31
Ω
10
—
nH
2/7/14 Rev. 3
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