FX30KMJ-2 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–20
Tc = 25°C
Pulse Test
–16
–12
–8
ID = –50A
–4
–30A
–15A
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
–40
–30
Tc = 25°C
VDS = –10V
Pulse Test
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
3
Ciss
2
Tch = 25°C
10³
VGS = 0V
7
f = 1MHZ
5
3
Coss
2
10²
7
Crss
5
3
2
–3
–5 –7–10⁰
–2 –3
–5 –7–10¹
–2 –3
–5 –7–10²
–2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX30KMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
160
VGS = –4V
120
–10V
80
Tc = 25°C
Pulse Test
40
0
–10^–1 –2 –3 –5 –7–10⁰ –2 –3 –5 –7–10¹ –2 –3 –5 –7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
4
TC =
3
25°C 75°C 125°C
2
10¹
7
5
4
VDS = –10V
3
Pulse Test
2
10⁰_{–7–100 –2 –3 –4–5 –7–101 –2 –3 –4–5 –7}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
Tch = 25°C
7
VGS = –10V
5
VDD = –50V
RGEN = RGS = 50Ω
3
td(off)
2
tf
10²
7
5
tr
3
2
td(on)
10¹
–7–10⁰ –2 –3 –4–5 –7–10¹ –2 –3 –4–5 –7
DRAIN CURRENT ID (A)
Jan.1999