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FX30KMJ-03 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
â5.0
Tc = 25°C
Pulse Test
â4.0
â3.0
ID = â50A
â2.0
â1.0
â30A
â15A
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
â50
Tc = 25°C
VDS = â10V
Pulse Test
â40
â30
â20
â10
0
0
â2 â4 â6 â8 â10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
104 f = 1MHZ
7 VGS = 0V
5
3
2
Ciss
103
7
5
Coss
3
Crss
2
102
7
5
3
2
â3 â5â7â100 â2 â3 â5â7â101 â2 3 â5â7â102 â2 â3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX30KMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
160
120
VGS = â4V
80
â10V
40
0
â10â1 â2 â3 â5 â7â100 â2 â3 â5â7â101 â2 â3 â5 â7â102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
VDS = â10V
Pulse Test
102
7
5
4
3
75°C 125°C
2
TC = 25°C
101
7
5
4
3
2
â100
â2 â3 â5 â7â101
â2 â3 â5 â7â102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
Tch = 25°C
7 VGS = â10V
5 VDD = â15V
4 RGEN = RGS = 50â¦
3
2
td(off)
102
tf
7
5
4
tr
3
2
td(on)
101
â5
â7
â100
â2 â3
â5 â7â101
â2 â3 â5
DRAIN CURRENT ID (A)
Jan.1999
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