FX20VSJ-3 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
TC = 25°C
Pulse Test
ID = –30A
–8
–6
–20A
–4
–10A
–2
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
TC = 25°C
VDS = –10V
Pulse Test
–40
–30
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
Ciss
3
2
10³
7
5
3
2
10²
7
5
3 TCh = 25°C
2 f = 1MHZ
10¹_–10^V₀^GS
= 0V
–2 –3
–5 –7 –10¹
–2 –3
Coss
Crss
–5 –7 –10²
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
VGS = –4V
0.3
–10V
0.2
0.1
0
–10⁰ –2 –3 –5 –7 –10¹ –2 –3 –5 –7 –10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
VDS = –10V
7 _{Pulse Test}
5
TC = 25°C
3
75°C
2
125°C
10¹
7
5
3
2
10⁰_{–100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
TCh = 25°C
7
VDD = –80V
5
VGS = –10V
RGEN = RGS = 50Ω
3
td(off)
2
tf
10²
7
tr
5
3
2
td(on)
10¹
–7
–10⁰
–2 –3
–5 –7 –10¹
–2 –3
–5 –7
DRAIN CURRENT ID (A)
Jan.1999