FX20KMJ-2 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

PRELIMINARY _{NSootimcee: pTahriasmisentroict} ^{alimfinitsalasrpeescuifbicjeactitotno. change.}
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–50
Tc = 25°C
Pulse Test
–40
–30
–20
–10
0
0
ID =
–40A
–10A
–20A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
Tc = 25°C
VDS = –10V
Pulse Test
–40
–30
–20
–10
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
3
2
Ciss
10³
7
Tch = 25°C
5
4
f = 1MHZ
VGS = 0V
3
2
Coss
10²
7
5
4
Crss
3
–3
–5–7–10⁰ –2 –3
–5–7–10¹
–2 –3
–5–7–10² –2 –3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Pch POWER MOSFET
FX20KMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
VGS =
0.4
–4V
0.3
–10V
0.2
0.1
Tc = 25°C
Pulse Test
0
–10^–1 –2 –3 –5–7–10⁰ –2 –3 –5–7–10¹ –2 –3 –5–7–10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10¹
7
5
4
3
TC = 25°C 75°C 125°C
2
10⁰
7
5
4
3
2
–7
–10⁰
VDS = –10V
Pulse Test
–2 –3 –4–5 –7 –10¹
–2 –3 –4–5 –7
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
td(off)
10²
tf
7
5
4
tr
3
2
td(on)
10¹
7
5
4
3
–5
–7 –10⁰
Tch = 25°C
VGS = –10V
VDD = –50V
RGEN = RGS = 50Ω
–2 –3 –4 –5 –7 –10¹ –2 –3 –4 –5
DRAIN CURRENT ID (A)
Jan.1999