FS7UM-18A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
50
TC = 25°C
Pulse Test
40
ID = 14A
30
20
7A
10
3A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
TC = 25°C
VDS = 50V
16
Pulse Test
12
8
4
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
10⁴
7
5
3
2
Ciss
10³
7
5
3
2
10²
Coss
7
5
3 Tch = 25°C
2 f = 1MHZ
Crss
VGS = 0V
10¹
2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS7UM-18A
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
TC = 25°C
Pulse Test
4.0
VGS = 10V
3.0
20V
2.0
1.0
0
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10¹
7
VDS = 10V
Pulse Test
5
TC = 25°C
75°C
3
125°C
2
10⁰
7
5
3
2
10^–₁¹_{0–1 2 3 5 7 100 2 3 5 7 101}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 200V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
td(off)
10²
7
tf
5
tr
3
2
td(on)
10¹
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
Feb.1999