FS50KMJ-2 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5
TC = 25°C
Pulse Test
4
3
ID = 80A
2
50A
1
20A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
TC = 25°C
VDS = 10V
80
Pulse Test
60
40
20
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
Tch = 25°C
10⁴ VGS = 0V
7 _{f = 1MHZ}
5
3
Ciss
2
10³
7
5
3
Coss
2
Crss
10²
7
5
3
2
3 5 710⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS50KMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
60
40
VGS = 4V
10V
20
0
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
VDS = 10V
Pulse Test
5
4
TC = 25°C
3
2
75°C
125°C
10¹
7
5
4
3
2
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 50V
5
4
td(off)
VGS = 10V
RGEN = RGS = 50Ω
3
2
tf
10²
7
5
4
tr
3
2
td(on)
10¹
10⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
DRAIN CURRENT ID (A)
Feb.1999