FS30KM-3 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5
TC = 25°C
Pulse Test
4
ID = 50A
3
2
30A
1
10A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
VDS = 10V
Pulse Test
40
30
20
10
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10⁴
7
5
3
Ciss
2
10³
7
5
3
2
Coss
10²
Crss
7
5
Tch = 25°C
f = 1MHZ
3 _{VGS = 0V}
2
3
5 710⁰
23
5 7 10¹
23
5 7 10²
23
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS30KM-3
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
TC = 25°C
Pulse Test
80
VGS = 10V
20V
60
40
20
0
3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10² 2 3
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
VDS = 10V
Pulse Test
5
4
3
2
TC = 25°C
75°C
10¹
125°C
7
5
4
3
2
10⁰_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
7
Tch = 25°C
VDD = 80V
5
4
VGS = 10V
RGEN = RGS = 50Ω
3
2
td(off)
10²
7
tf
5
4
tr
3
td(on)
2
10¹_{100 2 3 4 5 7 101 2 3 4 5 7 102}
DRAIN CURRENT ID (A)
Feb.1999