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FS20VS-6 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE
◁
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
TC = 25°C
Pulse Test
16
12
ID = 40A
8
4
20A
10A
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
TC = 25°C
VDS = 50V
32
Pulse Test
24
16
8
0
0
4
8
12 16 20
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
5
3
2
Ciss
103
7
5
3
2
Coss
102
7
5
Crss
3 Tch = 25°C
2 f = 1MHz
VGS = 0V
101
23
5 7 100 2 3
5 7 101 2 3
5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
MITSUBISHI Nch POWER MOSFET
FS20VS-6
HIGH-SPEED SWITCHING USE
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
0.3
VGS = 10V
0.2
20V
0.1
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
102
7 VDS = 10V
5 Pulse Test
3
2
TC = 25°C
101
7
5
75°C
3
2
125°C
100
100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
Tch = 25°C
VDD = 150V
5
VGS = 10V
RGEN = RGS = 50Ω
3
2
td(off)
102
7
tf
5
3
tr
2
td(on)
101
100 2 3 5 7 101 2 3 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
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