CM800HA-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM800HA-24H
Single IGBTMOD™ H-Series Module
800 Amperes/1200 Volts
1600
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 25^oC
15
12
1200 ^{VGE = 20V}
11
800
10
400
9
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 1600A
6
I_C = 800A
4
2
I_C = 320A
0
0
10⁴
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10³
10²
10¹
10¹
t_d(off)
t_d(on)
t_f
t_r
V_CC = 600V
V_GE = ±15V
R_G = 4.2Ω
T_j = 125°C
10²
COLLECTOR CURRENT I_C, (AMPERES)
10³
1600
1200
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 10V
T_j = 25°C
T_j = 125°C
800
400
0
0
10⁴
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T_j = 25°C
10³
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
400
800 1200 1600
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10³
10²
C_ies
10²
10¹
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10³
10²
t_rr
10²
I_rr
di/dt = -1600A/µsec
T_j = 25°C
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10¹
10³
C_oes
10¹
V_GE = 0V
f = 1MHz
10⁰
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 800A
16
V_CC = 400V
12
V_CC = 600V
8
4
0
0
1234
5
6
GATE CHARGE, Q_G, (µC)
199