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| CM75TU-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM75TU-12H
Six IGBTMOD⢠U-Series Module
75 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
150
15
Tj = 25oC
14
13
125 VGE = 20V
100
12
75
11
50
10
25
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 150A
6
IC = 75A
4
2
0
0
103
IC = 30A
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
tf
102
td(on)
101
VCC = 300V
tr
VGE = ±15V
RG = 8.3 â¦
Tj = 125°C
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
150
VCE = 10V
125
Tj = 25°C
Tj = 125°C
100
75
50
25
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
4
Tj = 25°C
Tj = 125°C
3
2
1
0
0
40
80
120 160
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
101
Cies
100
Coes
101
100
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
di/dt = -150A/µsec
Tj = 25°C
102
101
trr
Irr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
10-1
Cres
VGE = 0V
f = 1MHz
10-2
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 75A
16
VCC = 200V
12
VCC = 300V
8
4
0
0
50
100 1500 200
GATE CHARGE, QG, (nC)
79
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