CM75E3U-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM75E3U-12H
Chopper IGBTMOD™ U-Series Module
75 Amperes/600 Volts
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT Module
–
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi Module
–
Thermal Resistance, Junction to Case
R_th(j-c)
Clamp Diode Part
–
Contact Thermal Resistance
R_th(c-f) Per Module, Thermal Grease Applied
–
Typ.
–
–
–
0.035
Max.
0.4
0.9
0.9
–
Units
°C/W
°C/W
°C/W
°C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
150
T_j = 25^oC
125 ^{VGE = 20V}
14
13
100
15
12
75
11
50
10
25
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 150A
6
I_C = 75A
4
2
I_C = 30A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
150
V_CE = 10V
125
T_j = 25°C
T_j = 125°C
100
75
50
25
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
10⁰
1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
40
80
120
160
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
V_GE = 0V
f = 1MHz
10¹
10⁰
10^-1
C_ies
C_oes
C_res
10^-2
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
109