CM600DU-24F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 600 Amperes/1200 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM600DU-24F
Dual IGBTMOD™ F-Series Module
600 Amperes/1200 Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ies
C_oes
C_res
–
V_CE = 10V, V_GE = 0V
–
–
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 600V, I_C = 600A,
–
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time*
Diode Reverse Recovery Charge*
t_r
t_d(off)
t_f
t_rr
Q_rr
V_GE1 = V_GE2 = 15V,
–
R_G = 1.0⍀,
–
Inductive Load
–
Switching Operation
–
I_E = 600A
–
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)R
Per FWDi 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance
R_th(j-c')Q
Per IGBT 1/2 Module
–
T_c Reference Point Under Chips
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
–
External Gate Resistance
R_G
1.0
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**If you use this value, R_th(f-a) should be measured just under the chips.
Typ.
Max. Units
–
230
nf
–
10
nf
–
6
nf
–
450
ns
–
200
ns
–
800
ns
–
300
ns
–
500
ns
43.2
–
µC
Typ.
Max. Units
–
0.081 °C/W
–
0.11 °C/W
–
0.032** °C/W
0.010 –
–
52
°C/W
Ω
3