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CM50TF-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE
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CM50TF-24H
Six-IGBT IGBTMOD™ H-Series Module
50 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
100
Tj = 25oC
15
12
80 VGE = 20V
11
60
10
40
9
20
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 100A
6
IC = 50A
4
2
IC = 20A
0
0
103
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
tf
td(off)
102
101
100
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 6.3Ω
Tj = 125°C
101
COLLECTOR CURRENT, IC, (AMPERES)
102
TRANSFER CHARACTERISTICS
(TYPICAL)
100
VCE = 10V
Tj = 25°C
80
Tj = 125°C
60
40
20
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0
20
40 60
80 100
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
101
Cies
101
100
Coes
100
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
101
Irr
102
trr
100
VGE = 0V
f = 1MHz
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 50A
16
VCC = 400V
VCC = 600V
12
8
di/dt = -100A/µsec
Tj = 25°C
101
100
101
4
10-1
0
102
0
100
200
300
400
EMITTER CURRENT, IE, (AMPERES)
GATE CHARGE, QG, (nC)
337