CM50MD1-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE

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CM50MD1-12H
CI Module
Three Phase Converter + Three Phase Inverter
50 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
100
T_j = 25^oC ₁₅
12
V_GE =
75 20V
11
50
10
25
9
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 100A
6
I_C = 50A
4
2
0
0
10³
I_C = 20A
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
t_d(off)
10²
t_d(on)
10¹
10⁰
V_CC = 300V
V_GE = ±15V
R_G = 13Ω
t_r
T_j = 125°C
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
V_CE = 10V
T_j = 25°C
T_j = 125°C
75
50
25
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
T_j = 25°C
10¹
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
25
50
75
100
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10¹
C_ies
C_oes
10⁰
10⁰
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10¹
di/dt = -100A/µsec
T_j = 25°C
I_rr
10²
t_rr
10⁰
C_res
V_GE = 0V
f = 1MHz
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
16
V_CC = 200V
V_CC = 300V
12
8
10¹
10⁰
10¹
EMITTER CURRENT, I_E, (AMPERES)
10^-1
10²
4
0
0
50 100 150 200 250
GATE CHARGE, Q_G, (nC)
3