CM400DU-24NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM400DU-24NFH
Dual IGBTMOD™ NFH-Series Module
400 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Test Conditions
Min.
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)'Q
Per IGBT 1/2 Module,
—
TC Reference Point Under Chips
Rth(j-c)'D Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(c-f)
RG
Per 1/2 Module, Thermal Grease Applied —
0.78
Typ.
Max. Units
—
0.12 °C/W
—
0.23 °C/W
—
0.051 °C/W
—
0.093 °C/W
0.02
—
°C/W
—
7.8
Ω
800
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 25^oC
V_GE = 20V
14
15
13
600
12
400
11
10
200
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 800A
6
I_C = 400A
4
I_C = 160A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
V_GE = 10V
T_j = 25°C
600
T_j = 125°C
400
200
0
0
10³
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T_j = 25°C
T_j = 125°C
10²
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
8
V_GE = 15V
T_j = 25°C
7
T_j = 125°C
6
5
4
3
2
1
0
0
200
400
600
800
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
V_GE = 0V
10²
C_ies
10¹
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
7/11 Rev. 2
3