CM400DU-24F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 400 Amperes/1200 Volts

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CM400DU-24F
Dual IGBTMOD™ F-Series Module
400 Amperes/1200 Volts
Dynamic Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_ies
C_oes
C_res
–
V_CE = 10V, V_GE = 0V
–
–
Resistive
Turn-on Delay Time
t_d(on)
V_CC = 600V, I_C = 400A,
–
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time*
Diode Reverse Recovery Charge*
t_r
t_d(off)
t_f
t_rr
Q_rr
V_GE1 = V_GE2 = 15V,
–
R_G = 3.1⍀,
–
Inductive Load
–
Switching Operation
–
I_E = 400A
–
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)R
Per FWDi 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance
R_th(j-c')Q
Per IGBT 1/2 Module
–
T_c Reference Point Under Chips
Contact Thermal Resistance
R_th(c-f)
Per Module, Thermal Grease Applied
–
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**If you use this value, R_th(f-a) should be measured just under the chips.
Typ.
Max.
–
160
–
6.8
–
4
–
450
–
200
– 1000
–
300
–
550
23.6
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Typ.
Max. Units
–
0.11 °C/W
–
0.13 °C/W
–
0.045** °C/W
0.010 –
°C/W
3