CM300DY-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM300DY-12H
Dual IGBTMOD™ H-Series Module
300 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
600
T_j = 25^oC
V_GE = 20V
12
500
15
400
11
300
10
200
9
100
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 600A
6
I_C = 300A
4
2
0
0
10³
I_C = 120A
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_d(on)
t_f
10²
10¹
10¹
t_r
V_CC = 300V
V_GE = ±15V
R_G = 2.1Ω
T_j = 125°C
10²
COLLECTOR CURRENT, I_C, (AMPERES)
10³
TRANSFER CHARACTERISTICS
(TYPICAL)
600
V_CE = 10V
500
T_j = 25°C
T_j = 125°C
400
300
200
100
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 100 200 300 400 500 600
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
f = 1MHz
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
16
V_CC = 200V
I_rr
12
10²
10¹
V_CC = 300V
t_rr
8
di/dt = -600A/µsec
T_j = 25^oC
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10⁰
10³
4
0
0 200 400 600 800 1000 1200
GATE CHARGE, Q_G, (nC)
247