CM300DU-24NFH Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

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CM300DU-24NFH
Dual IGBTMOD™ NFH-Series Module
300 Amperes/1200 Volts
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
Symbol
Test Conditions
Min.
Rth(j-c)Q
Per IGBT 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)D
Per FWDi 1/2 Module, TC Reference
—
Point per Outline Drawing
Rth(j-c)'Q
Per IGBT 1/2 Module,
—
TC Reference Point Under Chips
Rth(j-c)'D
Per FWDi 1/2 Module,
—
TC Reference Point Under Chips
Rth(c-f) Per 1/2 Module, Thermal Grease Applied —
RG
1.0
Typ.
Max. Units
—
0.11 °C/W
—
0.18 °C/W
—
0.066 °C/W
—
0.1
°C/W
0.04
—
°C/W
—
10
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
600
T_j = 25°C
500
V_GE = 20V
14
15
13
12
400
300
11
200
10
100
9
8
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 600A
6
I_C = 300A
4
I_C = 120A
2
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
600
V_GE = 10V
500
T_j = 25°C
T_j = 125°C
400
300
200
100
0
0
10³
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T_j = 25°C
T_j = 125°C
10²
10¹
01
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
9
8
V_GE = 15V
T_j = 25°C
7
T_j = 125°C
6
5
4
3
2
1
0
0 100 200 300 400 500 600
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
7/11 Rev. 1
3