CM300DU-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM300DU-12H
Dual IGBTMOD™ U-Series Module
300 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
600
T_j = 25^oC
14
15
13
V_GE= 20V
480
12
360
11
240
10
120
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 600A
6
I_C = 300A
4
2
0
0
10³
I_C = 120A
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
t_d(off)
t_d(on)
10²
t_r
10¹
10¹
V_CC = 300V
V_GE = ±15V
R_G = 2.1 Ω
T_j = 125°C
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
600
V_CE = 10V
T_j = 25°C
480
T_j = 125°C
360
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
240
120
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
2
1
0
0 120 240 360 480 600
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10²
V_GE = 0V
f = 1MHz
10²
10¹
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
-di/dt = 600A/µsec
T_j = 25°C
I_rr
10²
10¹
t_rr
10¹
C_ies
10⁰
C_oes
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 300A
16
V_CC = 200V
12
V_CC = 300V
8
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10⁰
10³
4
0
0
200
400
600
800
GATE CHARGE, Q_G, (nC)
35