CM200EXS-34SA Datasheet, PDF (3/9 Pages) Powerex Power Semiconductors – Chopper IGBT NX-Series Module 200 Amperes/1700 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM200EXS-34SA
Chopper IGBT NX-Series Module
200 Amperes/1700 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Repetitive Peak Reverse Current
Forward Voltage Drop
Clamp Di Part
Forward Voltage Drop
Clamp Di Part
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
I_CES
I_GES
V_GE(th)
V_CE(sat)
(Terminal)
V_CE(sat)
(Chip)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
I_RRM
V_F^*1
(Terminal)
V_F^*1
(Chip)
t_rr^*1
Q_rr^*1
E_on
E_off
E_rr^*1
R_{CC' + EE'}
r_g
V_CE = V_CES, V_GE = 0V
±V_GE = V_GES, V_CE = 0V
I_C = 20mA, V_CE = 10V
I_C = 200A, V_GE = 15V, T_j = 25°C^*6
I_C = 200A, V_GE = 15V, T_j = 125°C^*6
I_C = 200A, V_GE = 15V, T_j = 150°C^*6
I_C = 200A, V_GE = 15V, T_j = 25°C^*6
I_C = 200A, V_GE = 15V, T_j = 125°C^*6
I_C = 200A, V_GE = 15V, T_j = 150°C^*6
V_CE = 10V, V_GE = 0V
V_CC = 1000V, I_C = 200A, V_GE = 15V
V_CC = 1000V, I_C = 200A,
V_GE = ±15V,
R_G = 1.3Ω,
Inductive Load
I_F = 200A, V_GE = 0V, T_j = 25°C^*6
I_F = 200A, V_GE = 0V, T_j = 125°C^*6
I_F = 200A, V_GE = 0V, T_j = 150°C^*6
I_F = 200A, V_GE = 0V, T_j = 25°C^*6
I_F = 200A, V_GE = 0V, T_j = 125°C^*6
I_F = 200A, V_GE = 0V, T_j = 150°C^*6
V_CC = 1000V, I_F = 200A, V_GE = ±15V
R_G = 1.3Ω, Inductive Load, Clamp Di Part
V_CC = 1000V, I_C = I_F = 200A,
V_GE = ±15V, R_G = 1.3Ω, T_j = 150°C,
Inductive Load, Clamp Di Part
Main Terminals-Chip,
Per Switch,T_C = 25°C^*2
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
51.4
Th
42.3
Tr
29.8
Tr
16.6
Di Di
Min.
Typ.
—
—
—
—
5.4
6
—
2.20
—
2.40
—
2.45
—
2.10
—
2.30
—
2.35
—
—
—
—
—
—
—
1100
—
—
—
—
—
—
—
—
—
—
—
4.10
—
2.70
—
2.60
—
4.0
—
2.60
—
2.50
—
—
—
21.3
—
46.0
—
52.0
—
42.0
—
—
—
2.5
0
LABEL SIDE
Each mark points to the center position of each chip.
Tr: IGBT Di: Clamp Diode Th: NTC Thermistor
Max.
1
0.5
6.6
2.7
—
—
2.6
—
—
35
1.5
0.35
—
400
100
700
600
1
5.3
—
—
5.2
—
—
300
—
—
—
—
2.0
—
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
mA
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
07/12 Rev. 0
3