CM200DU-34KA Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD KA-Series Module 200 Amperes/1700 Volts

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CM200DU-34KA
Dual IGBTMOD™ KA-Series Module
200 Amperes/1700 Volts
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Thermal Resistance
R_th(j-c)Q
Per IGBT 1/2 Module
–
R_th(j-c)R
Per FWDi 1/2 Module
–
R_th(c-f)
Per Module, Thermal Grease Applied
–
R_th(j-c')Q
T_c Measured Point
–
(Under Chips - IGBT Part)
* If you use this value, R_th(f-a) should be measured just under the chips.
Typ.
–
–
0.020
–
Max. Units
0.11 °C/W
0.18 °C/W
–
°C/W
0.05* °C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
400
T_j = 25^oC ₁₅
V_GE = 20V
300
14
11
12
10
200
9
100
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
6
I_C = 400A
4
I_C = 200A
2
I_C = 80A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
400
V_CE = 10V
T_j = 25°C
T_j = 125°C
300
200
100
0
0
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
10¹
10⁰
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
V_GE = 15V
T_j = 25°C
5
T_j = 125°C
4
3
2
1
0
0
100
200
300
400
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
C_ies
10¹
C_oes
10⁰
V_GE = 0V
f = 1MHz
10^-1
10^-1
10⁰
C_res
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
3