CM15TF-24H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

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CM15TF-24H
Six-IGBT IGBTMOD™ H-Series Module
15 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
30
V_GE = 20V
25 ^{Tj = 25oC 15}
12
20
11
15
10
10
9
5
7
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 30A
6
I_C = 15A
4
2
I_C = 6A
0
0
10³
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
t_f
10²
10¹
10⁰
t_d(on)
t_r
V_CC = 600V
V_GE = ±15V
R_G = 21Ω
T_j = 125°C
10¹
COLLECTOR CURRENT, I_C, (AMPERES)
10²
TRANSFER CHARACTERISTICS
(TYPICAL)
30
V_CE = 10V
25
T_j = 25°C
T_j = 125°C
20
15
10
5
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
T_j = 25°C
10¹
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0 5 10 15 20 25 30
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10¹
10⁰
10^-1
C_ies
C_oes
10⁰
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10¹
di/dt = -30A/µsec
T_j = 25°C
I_rr
10²
t_rr
10⁰
V_GE = 0V
C_res
10^-2
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 15A
16
V_CC = 400V
12
V_CC = 600V
8
10¹
10⁰
10¹
EMITTER CURRENT, I_E, (AMPERES)
10^-1
10²
4
0
0 20 40 60 80 100 120
GATE CHARGE, Q_G, (nC)
325