CM150TU-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM150TU-12H
Six IGBTMOD™ U-Series Module
150 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
T_j = 25^oC
15
14
13
240 ^{VGE= 20V}
12
180
11
120
10
60
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 300A
6
I_C = 150A
4
2
0
0
10⁴
I_C = 60A
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
10³
t_d(off)
t_d(on)
10²
10¹
10⁰
t_r
V_CC = 300V
V_GE = ±15V
R_G = 4.2 Ω
T_j = 125°C
10¹
10²
COLLECTOR CURRENT, I_C, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
V_CE = 10V
T_j = 25°C
240
T_j = 125°C
180
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_GE = 15V
T_j = 25°C
4
T_j = 125°C
3
120
60
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
2
1
0
0 60 120 180 240 300
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
V_GE = 0V
f = 1MHz
10²
10⁰
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10³
10²
di/dt = -300A/µsec
T_j = 25°C
10²
t_rr
10¹
I_rr
10¹
10¹
10²
EMITTER CURRENT, I_E, (AMPERES)
10⁰
10³
10¹
C_ies
10⁰
C_oes
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
GATE CHARGE, V_GE
20
I_C = 150A
16
V_CC = 200V
12
V_CC = 300V
8
4
0
0
100
200
300
400
GATE CHARGE, Q_G, (nC)
87