CM150DY-34A Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM150DY-34A
Dual IGBTMOD™ A-Series Module
150 Amperes/1700 Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)Q
Rth(j-c)D
Rth(c-f)
Per IGBT*⁴
Per FWDi*⁴
Thermal Grease Applied*^4,*⁵
External Gate Resistance
RG
*4 Case temperature (TC), and heatsink temperature (Tf) measured point is just under the chips.
*5 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Min.
Typ.
Max. Units
—
—
0.078 °C/W
—
—
0.15 °C/W
—
—
—
°C/W
3.2
—
32
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
300
V_GE =
13
20V
12
200
15
T_j = 25^oC
11
100
10
8
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 300A
I_C = 150A
6
I_C = 60A
4
2
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
V_CE = 15V
T_j = 25°C
4
T_j = 125°C
3
2
1
0
0
10³
100
200
300
COLLECTOR-CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10²
T_j = 25°C
T_j = 125°C
10¹
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
V_GE = 10V
T_j = 25°C
T_j = 125°C
200
100
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
V_GE = 0V
C_ies
10¹
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
10/13 Rev. 2
3