CM150DY-24NF Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

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CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_C Reference
—
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi 1/2 Module, T_C Reference
—
Point per Outline Drawing
Thermal Resistance, Junction to Case
Contact Thermal Resistance
External Gate Resistance
R_th(j-c)'Q
Per IGBT 1/2 Module,
—
T_C Reference Point Under Chips
R_th(c-f) Per 1/2 Module, Thermal Grease Applied —
R_G
2.1
Typ.
Max. Units
—
0.16 °C/W
—
0.25 °C/W
—
0.093 °C/W
0.07
—
°C/W
—
21
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
300
V_GE =
20V
250
13 ¹²
15
T_j = 25^oC
200
11
150
100
10
50
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
T_j = 125°C
10²
10¹
0
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
4
V_GE = 15V
T_j = 25°C
3
T_j = 125°C
2
1
0
0 50 100 150 200 250 300
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10²
C_ies
10¹
C_oes
10⁰
C_res
V_GE = 0V
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
I_C = 300A
6
I_C = 150A
4
I_C = 60A
2
0
6
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_f
t_d(off)
10²
t_d(on)
t_r
10¹
10⁰
10¹
V_CC = 600V
V_GE = ±15V
R_G = 2.1Ω
T_j = 125°C
Inductive Load
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
3