CM150DUS-12F Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150DUS-12F
Trench Gate Design Dual IGBTMOD™
150 Amperes/600 Volts
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
R_th(j-c)D
Per FWDi 1/2 Module, T_c Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c')Q
Per IGBT 1/2 Module,
–
T_c Reference Point Under Chip
R_th(c-f)
Per Module, Thermal Grease Applied
–
External Gate Resistance
R_G
4.2
** If you use this value, Rth(f-a) should be measured just under the chips.
Typ.
Max. Units
0.24 °C/W
–
0.47 °C/W
–
0.19** °C/W
0.07 –
–
42
°C/W
Ω
OUTPUT CHARACTERISTICS
(TYPICAL)
300
T_j = 25^oC
250
13 ¹¹
15
10
9.5
8.5
V_GE = 20V
9
200
8
150
100
7.5
50
7
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
T_j = 25°C
4
3
I_C = 300A
2
I_C = 150A
I_C = 60A
1
0
6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10¹
10⁰
10^-1
10¹
V_CC = 300V
V_GE = ±15V
R_G = 4.2 Ω
T_j = 125°C
HALF-BRIDGE
SWITCHING
E_SW(on)
E_SW(off)
10²
10³
COLLECTOR-CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
V_GE = 15V
2.5
T_j = 25°C
T_j = 125°C
2.0
1.5
1.0
0.5
0
0 50 100 150 200 250 300
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
V_CE
10²
C_ies
10¹
10¹
10⁰
0 0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
10⁰
C_oes
C_res
V_GE = 0V
f = 1MHz
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
3