CM150DU-34KA Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 150 Amperes/1700 Volts

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM150DU-34KA
Dual IGBTMOD™ KA-Series Module
150 Amperes/1700 Volts
Thermal and Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Thermal Resistance
R_th(j-c)Q
Per IGBT 1/2 Module
–
R_th(j-c)D
Per FWDi 1/2 Module
–
R_th(c-f)
Per Module, Thermal Grease Applied
–
R_th(j-c')Q
T_c Measured Point
–
(Under Chips - IGBT Part)
* If you use this value, R_th(f-a) should be measured just under the chips.
Typ.
–
–
0.040
–
Max. Units
0.11 °C/W
0.18 °C/W
–
°C/W
0.07* °C/W
OUTPUT CHARACTERISTICS
(TYPICAL)
300
T_j = 25^oC ₁₅
250
V_GE = 20V
14
11
12
200
10
150
9
100
50
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
T_j = 25°C
8
6
I_C = 300A
4
I_C = 150A
2
I_C = 60A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
V_CE = 10V
250
T_j = 25°C
T_j = 125°C
200
150
100
50
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10³
T_j = 25°C
10²
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
V_GE = 15V
T_j = 25°C
5
T_j = 125°C
4
3
2
1
0
0 50 100 150 200 250 300
COLLECTOR-CURRENT, I_C, (AMPERES)
CAPACITANCE VS. V_CE
(TYPICAL)
10²
V_GE = 0V
f = 1MHz
C_ies
10¹
10¹
10⁰
1
2
3
4
5
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
C_oes
10⁰
C_res
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
3