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CM150DU-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
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CM150DU-12H
Dual IGBTMOD™ U-Series Module
150 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
300
Tj = 25oC
VGE = 20V
240
15
14
13
12
180
11
120
10
60
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 300A
6
IC = 150A
4
2
IC = 60A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
VCC = 300V
VGE = ±15V
103
RG = 4.2 Ω
Tj = 125°C
tf
102
td(on)
td(off)
101
tr
100
101
102
103
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
VCE = 10V
Tj = 25°C
240
Tj = 125°C
180
120
60
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0
80
160
240
320
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
VGE = 0V
f = 1MHz
101
Cies
102
100
Coes
101
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
di/dt = -300A/µsec
Tj = 25°C
trr
102
101
Irr
Cres
10-1
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 150A
16
VCC = 200V
VCC = 300V
12
8
101
101
102
EMITTER CURRENT, IE, (AMPERES)
100
103
4
0
0
100
200 300
400
GATE CHARGE, QG, (nC)
27