|
CM150DU-12F Datasheet, PDF (3/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 150 Amperes/600 Volts | |||
|
◁ |
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DU-12F
Trench Gate Design Dual IGBTMODâ¢
150 Amperes/600 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Cies
Coes
Cres
â
VCE = 10V, VGE = 0V
â
â
Inductive
Turn-on Delay Time
td(on)
VCC = 300V, IC = 150A,
â
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
tr
td(off)
tf
trr
Qrr
VGE1 = VGE2 = 15V,
â
RG = 4.2â,
â
Inductive Load
â
Switching Operation
â
IE = 150A
â
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
Rth(j-c)Q
Per IGBT 1/2 Module, Tc Reference
â
Point per Outline Drawing
Thermal Resistance, Junction to Case
Rth(j-c)D
Per FWDi 1/2 Module, Tc Reference
â
Point per Outline Drawing
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Rth(j-c)'Q
Per IGBT 1/2 Module,
â
Tc Reference Point Under Chip
Rth(c-f)
Per Module, Thermal Grease Applied
â
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Typ.
Max. Units
â
41
nf
â
2.7
nf
â
1.5
nf
â
120
ns
â
100
ns
â
350
ns
â
250
ns
â
150
ns
2.8
â
µC
Typ.
Max. Units
0.24 °C/W
â
0.47 °C/W
0.16
°C/W
0.035 â
°C/W
3
|
▷ |