CM1400E3U-24NF Datasheet, PDF (3/5 Pages) Powerex Power Semiconductors – Mega Power Chopper IGBTMOD 1400 Amperes/1200 Volts

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM1400E3U-24NF
Mega Power Chopper IGBTMOD™
1400 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Turn-on Delay Time
Load
Rise Time
Switch
Turn-off Delay Time
Times
Fall Time
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage**
External Gate Resistance
I_CES
V_GE(th)
I_GES
V_CE(sat)
(Chip)
R_(lead)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
Q_rr
V_EC
R_G
V_CE = V_CES, V_GE = 0V
I_C = 140mA, V_CE = 10V
V_GE = V_GES, V_CE = 0V
I_C = 1400A, V_GE = 15V, T_j = 25°C
I_C = 1400A, V_GE = 15V, T_j = 125°C
I_C = 1400A, Terminal-Chip
V_CE = 10V, V_GE = 0V
V_CC = 600V, I_C = 1400A, V_GE = 15V
V_CC = 600V, I_C = 1400A,
V_GE1 = V_GE2 = 15V,
R_G = 0.22Ω, Inductive Load
Switching Operation
I_E = 100A
I_E = 100A, V_GE = 0V
Min.
–
6
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.22
Typ.
–
7
–
1.8
2.0
0.286
–
–
–
7200
–
–
–
–
–
90
–
–
Max.
1
8
1.5
2.5
–
–
220
25
4.7
–
800
300
1000
300
700
–
3.0
2.2
Units
mA
Volts
μA
Volts
Volts
mΩ
nF
nF
nF
nC
ns
ns
ns
ns
ns
μC
Volts
Ω
Clamp Diode Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Emitter-Collector Voltage
(without Lead Resistance)
V_FM
(Chip)
I_F =1400A, Clamp Diode Part
–
Reverse Recovery Time
t_rr
I_F =1400A, Clamp Diode Part
–
Reverse Recovery Charge
Q_rr
–
* Pulse width and repetition rate should be such that the device junction temperature (T_j) does not exceed T_j(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c)Q
Per IGBT 1/2 Module, T_C Reference
–
Point per Outline Drawing
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R_th(j-c)D
Per Clamp Diode 1/2 Module,
–
T_C Reference Point per Outline Drawing
R_th(j-c')Q
Per IGBT 1/2 Module,
–
T_C Reference Point Under Chip
R_th(j-c')D
Per Clamp Diode 1/2 Module,
–
T_C Reference Point Under Chip
R_th(c-f) Per 1/2 Module, Thermal Grease Applied –
Typ.
Max. Units
–
3.2
Volts
–
700
ns
90
–
μC
Typ.
Max. Units
–
0.032 °C/W
–
0.053 °C/W
–
0.014 °C/W
–
0.023 °C/W
0.016 –
°C/W
09/08
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