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CM10MD-24H Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM10MD-24H
CIB Module
Three Phase Converter + Three Phase Inverter + Brake
10 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max. Units
Converter Sector
Repetitive Reverse Current
Forward Voltage Drop
Thermal Resistance (Junction-to-Fin)
Brake Sector
Collector-Emitter Saturation Voltage
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate-Emitter Cutoff Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Forward Voltage Drop
Thermal Resistance (Junction-to-Fin)
IRRM
VFM
Rth(j-f)
VR = VRRM, Tj = 150°C
IF = 10A
Per Diode
—
—
8
mA
—
—
1.7
Volts
—
—
2.7
°C/W
VCE(sat)
ICES
VGE(th)
IGES
Cies
Coes
Cres
QG
VFM
Rth(j-f)
VGE = 15V, IC = 10A, Tj = 25°C
VGE = 15V, IC = 10A, Tj = 150°C
VCE = VCES, VGE = 0V
IC = 1mA, VCE = 10V
VGE = VGES, VCE = 0V
VGE = 0V, VCE = 10V
VCC = 600V, IC = 10A, VGE = 15V
IF = 10A
Per IGBT
Per Clamp Diode
—
2.7
3.4
Volts
—
2.45
—
Volts
—
—
1
mA
4.5
6.0
7.5
Volts
—
—
0.5
µA
—
—
2.0
nF
—
—
1.5
nF
—
—
0.4
nF
—
50
—
nC
—
—
1.7
Volts
—
—
2.2
°C/W
—
—
2.7
°C/W
3
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