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CM100MX-12A Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM100MX-12A
NX-Series CIB Module
(3Ã Converter + 3Ã Inverter + Brake)
100 Amperes/600 Volts
Electrical Characteristics, Tj = 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
Collector Cutoff Current
ICES
VCE = VCES, VGE = 0V
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
Gate-Emitter Threshold Voltage
VGE(th)
IC = 10mA, VCE = 10V
Collector-Emitter Saturation Voltage
VCE(sat)
Tj = 25°C, IC = 100A, VGE = 15V*5
Tj = 125°C, IC = 100A, VGE = 15V*5
IC = 100A, VGE = 15V, Chip*5
Input Capacitance
Cies
Output Capacitance
Coes
VCE = 10V, VGE = 0V
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
VCC = 300V, IC = 100A, VGE = 15V
Inductive
Turn-on Delay Time
td(on)
Load
Turn-on Rise Time
tr
VCC = 300V, IC = 100A, VGE = ±15V,
Switch
Turn-off Delay Time
td(off)
RG = 6.2â¦, Inductive Load
Time
Turn-off Fall Time
tf
Emitter-Collector Voltage
VEC*1
Tj = 25°C, IE = 100A, VGE = 0V*5
Tj = 125°C, IE = 100A, VGE = 0V*5
IE = 100A, VGE = 0V, Chip
Reverse Recovery Time
trr*1
VCC = 300V, IE = 100A, VGE = ±15V
Reverse Recovery Charge
Qrr*1
RG = 6.2â¦, Inductive Load
Internal Gate Resistance
rg
TC = 25°C, Per Switch
External Gate Resistance
RG
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
Min.
Typ.
â
â
â
â
5
6
â
1.7
â
1.9
â
1.6
â
â
â
â
â
â
â
270
â
â
â
â
â
â
â
â
â
2.0
 â 1.95
Ââ
1.9
â
â
â
3.6
â
0
6.0
â
Max.
1.0
0.5
7
2.1
â
â
13.3
1.4
0.45
â
100
100
300
600
2.8
â
â
200
â
â
62
Units
mA
µA
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
ns
µC
â¦
â¦
Rev. 11/11
3
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