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| CM100DU-12H Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-12H
Dual IGBTMOD⢠U-Series Module
100 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
200
Tj = 25oC
VGE = 20V
160
15
14
13
12
120
11
80
10
40
9
8
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 200A
6
IC = 100A
4
2
IC = 40A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 300V
VGE = ±15V td(off)
RG = 6.3 â¦
Tj = 125°C
tf
102
td(on)
101
tr
100
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
200
VCE = 10V
Tj = 25°C
160
Tj = 125°C
120
80
40
0
0
4
8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
Tj = 25°C
102
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0 40 80 120 160 200
COLLECTOR-CURRENT, IC, (AMPERES)
CAPACITANCE VS. VCE
(TYPICAL)
102
VGE = 0V
f = 1MHz
101
Cies
100
Coes
10-1
Cres
101
0.6 1.0 1.4 1.8 2.2 2.6 3.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
di/dt = -200A/µsec
Tj = 25°C
102
trr
101
Irr
101
100
101
EMITTER CURRENT, IE, (AMPERES)
100
102
10-2
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE CHARGE, VGE
20
IC = 100A
16
VCC = 200V
VCC = 300V
12
8
4
0
0 50 100 150 200 250 300
GATE CHARGE, QG, (nC)
23
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